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Quantum Science, an innovator in short-wave infrared (SWIR) quantum dot technology with its INFIQ QDs, has been granted the ...
By using the Rohm MOSFETs, Schaeffler has boosted the output of the brick by increasing the maximum possible battery voltage ...
Engineers at Lumileds pioneered CSP technology in 2013 with the company’s Luxeon Flip Chip. The devices do not require an ...
Synopsys subsidiary OpenLight, a developer of photonic ASIC (PASIC) chip design and manufacturing based on heterogeneous ...
Silanna UV has released its next generation Far UVC LED, the SF2-3T9B5L1-TB, which exceeds the popular SF1 series, with UVC ...
Researchers at Nagoya University in Japan have created the first functional pn diodes using Ga 2 O 3. Their method 'P-type ...
Kioxia Iwate fab will start evaluating its photocathode e-Beam system in late September. During the critical field test, ...
VisIC Technologies has introduced ist 650V second-generation Gen 2 products, which represent a 33 percent shrink of die size compared to Gen 1+ and 50 percent to Gen 1. With RDS (ON) values as low as ...
LED manufacturer Nichia will present its portfolio of Pixelated Light Source (PLS) solutions for adaptive driving beam (ADB) headlamps at the International Symposium on Automotive ...
X-FAB Silicon Foundries SE is building on its expertise in GaN processing technology for high-power applications by introducing GaN-on-Si foundry services for dMode devices as part of its XG035 ...
Researchers at the University of Osaka in Japan have developed a novel technique to enhance the performance and reliability of SiC MOS devices. This breakthrough uses a two-step annealing process ...
The University of Wisconsin-Madison has opened an Ultra-Wide Bandgap Semiconductor MOCVD Laboratory, a facility that will focus on the emerging class of ultra wide bandgap III-nitride semiconductors ...
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